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APA Citation
Gao, M., Chen, D. Y., Du, H. W., Wu, K. J., Meng, F. Y., & Ma, Z. Q. (2020). the hole transport mechanism of MoOx/a-Si: H(i)/n-Si heterojunction photovoltaic devices: the source of the 'S-shaped' behavior. Journal of physics, 53, . http://access.bl.uk/ark:/81055/vdc_100108526927.0x000062