Improvement of tunnel compensated quantum well infrared detector. (December 2019)

• Record Type: Journal Article
• Authors: Li, Chaohui; Deng, Jun; Sun, Weiye; He, Leilei; Li, Jianjun; Han, Jun; Shi, Yanli
• Is Part Of: Journal of semiconductors. Volume 40:Number 12(2019:Dec.)
• Publication Date: 2019-12
• Subjects: infrared detector -- tunnel compensation -- superlattice; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/40/12/122902
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: To reduce the difficulty of the epitaxy caused by multiple quantum well infrared photodetector (QWIP) with tunnel compensation structure, an improved structure is proposed. In the new structure, the superlattices are located between the tunnel junction and the barrier as the infrared absorption region, eliminating the effect of doping concentration on the well width in the original structure. Theoretical analysis and experimental verification of the new structure are carried out. The experimental sample is a two-cycle device, each cycle contains a tunnel junction, a superlattice infrared absorption region and a thick barrier. The photosurface of the detector is 200 × 200 μ m 2 and the light is optically coupled by 45° oblique incidence. The results show that the optimal operating voltage of the sample is –1.1 V, the dark current is 2.99 × 10 –8 A, and the blackbody detectivity is 1.352 × 10 8 cm·Hz 1/2 ·W –1 at 77 K. Our experiments show that the new structure can work normally.