Cite
HARVARD Citation
Wang, F. et al. (2020). Erratum: "Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory" [Appl. Phys. Express 13, 054002 (2020)]. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Wang, F. et al. (2020). Erratum: "Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory" [Appl. Phys. Express 13, 054002 (2020)]. Applied physics express. p. . [Online].