Cite

    Takino, J., Sumi, T., Okayama, Y., Kitamoto, A., Imanishi, M., Yoshimura, M., Asai, N., Ohta, H., Mishima, T., & Mori, Y. (2020). extreme reduction of on-resistance in vertical GaN p–n diodes by low dislocation density and high carrier concentration GaN wafers fabricated using oxide vapor phase epitaxy method. Applied physics express, 13, . http://access.bl.uk/ark:/81055/vdc_100108283624.0x000004