DIBL enhancement in ferroelectric-gated FinFET. (7th January 2019)

• Record Type: Journal Article
• Authors: Cho, Hyungki; Shin, Changhwan
• Is Part Of: Semiconductor science and technology. Volume 34:Number 2(2019)
• Publication Date: 2019-01-07
• Subjects: DIBL -- FinFET -- NC-FinFET; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1361-6641/aaf518
• Languages: English
• ISSNs: 0268-1242

Abstract

Abstract: Drain-induced-barrier-lowering (DIBL) is one of short-channel-effects (SCEs) of conventional field effect transistors (FET), which results in lowering the threshold voltage of short-channel transistors. To properly control the DIBL of FinFETs, it is well known that the fin width of the FinFET can be adjusted (usually, a narrower fin width to enhance gate-to-channel coupling). In this work, the fin width effect of FinFETs (vs. ferroelectric-gated FinFETs, a.k.a., negative capacitance (NC) FinFETs) on the DIBL has been investigated and compared. As a result, it is experimentally verified that the NC-FinFET has superior gate-to-channel controllability and better subthreshold swing due to the negative capacitance effect of ferroelectric capacitor.