Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy. (9th March 2020)

• Record Type: Journal Article
• Authors: Ranga, Praneeth; Bhattacharyya, Arkka; Rishinaramangalam, Ashwin; Ooi, Yu Kee; Scarpulla, Michael A.; Feezell, Daniel; Krishnamoorthy, Sriram
• Is Part Of: Applied physics express. Volume 13:Number 4(2020)
• Publication Date: 2020-03-09
• Subjects: Delta Doping -- Modulation Doping -- gallium oxide -- heterostructures; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ab7712
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown β -Ga2 O3 thin films using silane as a precursor. The delta-doped β -Ga2 O3 epitaxial films are characterized using capacitance–voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 × 10 12 cm −2 to 9 × 10 12 cm −2 with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density ( n s : 6.4 × 10 12 cm −2 ) degenerate electron sheet charge in a delta-doped β -(Al0.26 Ga0.74 )2 O3 / β -Ga2 O3 heterostructure. The total charge could also include a contribution from a parallel channel in the β -(Al0.26 Ga0.74 )2 O3 alloy barrier.