Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy. (9th March 2020) - Ranga, Praneeth
Abstract: We report on the silicon delta doping of metalorganic vapor-phase epitaxy grown β -Ga2 O3 thin films using silane as a precursor. The delta-doped β -Ga2 O3 epitaxial films are characterized using capacitance–voltage profiling and secondary-ion mass spectroscopy. The sheet charge density is in the range of 2.9 × 10 12 cm −2 to 9 × 10 12 cm −2 with an HWHM (towards the substrate) ranging from 3.5 nm to 6.2 nm. We also demonstrate a high-density ( n s : 6.4 × 10 12 cm −2 ) degenerate electron sheet charge in a delta-doped β -(Al0.26 Ga0.74 )2 O3 / β -Ga2 O3 heterostructure. The total charge could also include a contribution from a parallel channel in the β -(Al0.26 Ga0.74 )2 O3 alloy barrier.