Cite
HARVARD Citation
Ismail, M. et al. (2020). Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications. Nanotechnology. p. . [Online].
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Ismail, M. et al. (2020). Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications. Nanotechnology. p. . [Online].