Channel width dependent subthreshold operation of tri-gate junctionless transistors. (September 2020)

• Record Type: Journal Article
• Authors: Jeon, Dae-Young; Mouis, Mireille; Barraud, Sylvain; Ghibaudo, Gérard
• Is Part Of: Solid-state electronics. Volume 171(2020)
• Publication Date: 2020-09
• Subjects: Tri-gate junctionless transistors (JLTs) -- Subthreshold conduction -- Width variation -- On current to off current ratio (Ion/Ioff) -- Subthreshold swing (SS) -- Maximum depletion width; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107860
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Subthreshold operation of tri-gate junctionless transistors (JLTs) with various effective width (Weff ) was investigated. Physical operation mechanism on the subthreshold regime of JLTs was also discussed in detail. The on current to off current ratio (Ion /Ioff ) and subthreshold swing (SS) of JLTs were varied dramatically as changing Weff . Remained carriers at the bottom caused a higher off-current, a deviated shape of log10 (n) derivatives. In addition, a better immunity against short channel effects (SCEs) in JLTs was proven. Abstract: Junctionless transistors (JLTs) are one of attractive candidates for further scaling down thanks to their promising advantages based on a structural simplicity without PN junctions, and their physical operation is quite different from traditional inversion-mode (IM) transistors. In this paper, we investigated the subthreshold operation of tri-gate JLTs with various effective width (Weff ) and compared to that of IM transistors. The on current to off current ratio (Ion /Ioff ) and subthreshold swing (SS) of JLTs were varied dramatically as changing Weff . In addition, a better immunity against short channel effects (SCEs) of JLTs was proven. Physical operation mechanism on the subthreshold regime was also discussed in detail with considering distribution of mobile charge carriers, maximum depletion width, full-depletion mode, bulk neutral and surface accumulation conduction.