Stability of zinc nitride thin-film transistors under positive and negative bias stress. (September 2020)

• Record Type: Journal Article
• Authors: Dominguez, Miguel A.; Pau, Jose Luis; Redondo-Cubero, Andrés
• Is Part Of: Solid-state electronics. Volume 171(2020)
• Publication Date: 2020-09
• Subjects: Electrical stress -- Thin-film transistors -- Zinc nitride -- Spin-on glass; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107841
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: Electrical stability of Zn3 N2 TFTs under negative bias stress and positive bias stress is presented. After 24 h of rest period, the ΔVT under NBS and PBS is reversible. The negative ΔVT can be recovered applying a NBS, and the positive ΔVT applying a PBS. The C-V MOS capacitors under NBS and PBS, agrees with the ΔVT in the Zn3 N2 TFTs. Abstract: In this work, the electrical stability of zinc nitride (Zn3 N2 ) Thin-film Transistors (TFTs) under negative bias stress (NBS) and positive bias stress (PBS) is presented. The Zn3 N2 TFTs were fabricated on plastic substrates. Spin-on glass was used as gate dielectric. The threshold voltage shift (ΔVT ) and its recovery are analyzed during a long stress time and after a period of rest. The hysteresis of the transfer characteristics after the electrical stress is also analyzed. In order to explain the mechanism of instability in the Zn3 N2 TFTs, MOS capacitors were fabricated and characterized under NBS and PBS. The behavior exhibited in MOS capacitors under NBS and PBS, is in agreement with the ΔVT exhibited in the Zn3 N2 TFTs under NBS and PBS, respectively.