Cite
HARVARD Citation
Rouf, P. et al. (2020). Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition. Journal of materials chemistry. 8 (25), pp. 8457-8465. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Rouf, P. et al. (2020). Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition. Journal of materials chemistry. 8 (25), pp. 8457-8465. [Online].