The influence of cobalt (Co) doping on the electrical and dielectric properties of LaCr1-xCoxO3 perovskite-oxide compounds. (April 2020)

• Record Type: Journal Article
• Authors: Coskun, M.; Polat, O.; Coskun, F.M.; Durmus, Z.; Caglar, M.; Turut, A.
• Is Part Of: Materials science in semiconductor processing. Volume 109(2020)
• Publication Date: 2020-04
• Subjects: Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.104923
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: We synthesized LaCr1-x Cox O3 (x = 0, 0.01, 0.10, 0.15, 0.20, 0.30) compounds by solid-state reaction method. SEM and EDX analyses were carried out to study their structural and chemical properties. Furthermore, their electrical/dielectric properties including real and imaginary part of dielectric function, real and imaginary part of impedance, conductivity, were investigated at wide temperature (between −100 0 C and 100 0 C) and frequency range (1 Hz–10 7 Hz) by using Broadband Impedance Spectroscopy (Novocontrol). Temperature dependent power law exponent, s, showed that different conduction mechanisms need to be considered to study the conduction in the investigated samples. The calculated activation energies from the conductivity varied between 0.170 eV and 0.388 eV indicating that the oxygen vacancies and small polaron hopping conduction taken place in the samples. Moreover, the Nyquist plots demonstrated that grain and grain boundary relaxations happen in the investigated specimens.