Corrigendum to "Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels" [Mater. Sci. Semicond. Process. 114 (2020) 105063]. (15th August 2020)

Record Type:: Journal Article
Title:: Corrigendum to "Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels" [Mater. Sci. Semicond. Process. 114 (2020) 105063]. (15th August 2020)
Main Title:: Corrigendum to "Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels" [Mater. Sci. Semicond. Process. 114 (2020) 105063]
Authors:: Chen, Daihua
Zhao, Jianguo
Long, Xianjian
Wang, Bingjun
Liu, Yao
Liang, Yi
Zhang, Xiong
Wan, Lingyu
Abstract:
Is Part Of:: Materials science in semiconductor processing. Volume 115(2020)
Journal:: Materials science in semiconductor processing
Issue:: Volume 115(2020)
Issue Display:: Volume 115, Issue 2020 (2020)
Year:: 2020
Volume:: 115
Issue:: 2020
Issue Sort Value:: 2020-0115-2020-0000
Page Start:
Page End:
Publication Date:: 2020-08-15
Subjects:: Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152
Journal URLs:: http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗
DOI:: 10.1016/j.mssp.2020.105137 ↗
Languages:: English
ISSNs:: 1369-8001
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
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Ingest File:: 13517.xml