Cite
HARVARD Citation
Sánchez, L. et al. (2020). BTI saturation and universal relaxation in SiC power MOSFETs. Microelectronics and reliability. p. . [Online].
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Sánchez, L. et al. (2020). BTI saturation and universal relaxation in SiC power MOSFETs. Microelectronics and reliability. p. . [Online].