TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors. (June 2020)

• Record Type: Journal Article
• Authors: Giuliano, Federico; Magnone, Paolo; Pistollato, Simone; Tallarico, Andrea Natale; Reggiani, Susanna; Fiegna, Claudio; Depetro, Riccardo; Rossetti, Mattia; Croce, Giuseppe
• Is Part Of: Microelectronics and reliability. Volume 109(2020)
• Publication Date: 2020-06
• Subjects: Hot-carrier degradation -- LDMOS -- Split-gate -- TCAD -- Reliability; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2020.113643
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: A combined experimental and simulation analysis of the degradation mechanisms induced by hot carriers in a silicon-based split-gate n-channel LDMOS transistor featuring an STI structure is reported. In this regime, electrons can gain sufficient kinetic energy necessary to create charged traps at the silicon/oxide interface, thus inducing device degradation and causing the shift of the electrical parameters of the device. In particular, the on-resistance degradation in linear regime has been experimentally characterized at different stress conditions and at room temperature. The hot-carrier degradation has been reproduced in the frame of TCAD simulations by using physical-based models aimed at reproducing the degradation kinetics. An investigation of the electron distribution function at different stress conditions and its dependence on the split-gate bias is carried out achieving a quantitative understanding of the role played by hot electrons in the hot-carrier degradation mechanisms of the device under test. Highlights: Investigation of LDMOS with STI structure and split gate TCAD simulations of hot electrons degradation mechanisms by using the Boltzmann Transport Equation (BTE) solution TCAD has been proved to be a useful tool to quantitatively describe the degradation mechanisms and their localization The device has been proved having an electric field peak almost independent on the split-gate bias.