Improvement in efficiency and luminous power of AlGaN-based D-UV LEDs by using partially graded quantum barriers. (June 2020)

• Record Type: Journal Article
• Authors: Gupta, Himanshu; Ahmad, Shameem; Kattayat, Sandhya; Kumar, Dheeraj; Dalela, Saurabh; Siddiqui, M.J.; Alvi, P.A.
• Is Part Of: Superlattices and microstructures. Volume 142(2020)
• Publication Date: 2020-06
• Subjects: GaN -- AlGaN -- LED -- Efficiency -- Luminous power; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2020.106543
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this article, we have demonstrated a new AlGaN-based D-UV LED (Deep-Ultraviolet Light Emitting Diode) structure and investigated improved electrical output characteristics theoretically. In the new structure, we have used partially graded quantum barriers (PQBs) rather than stepped quantum barrier (SQBs) as setup in conventional LEDs. The simulation results confirm that the usage of PQBs in new D-UV LED structure notably enhances the internal quantum efficiency (IQE), light output power (LOP) or luminous power and enhances power spectral density in the D-UV region. The reason behind this improvement is higher potential barrier for carriers in the active region which helps in improving the carrier's confinement in the quantum wells and favors significant increment in radiative recombination. Highlights: Design of new heterostructure for AlGaN-based D-UV LED. Usage of partially graded quantum barriers (PQBs). Simulation using SRH (Shockley-Read-Hall) recombination and k. p model. Significant improvement in efficiency and luminous power. Significant improvement in spectral power density in D-UV region.