Impact of Schottky contacts on p-type back enhanced SOI MOSFETs. (July 2020)

• Record Type: Journal Article
• Authors: Yojo, Leonardo S.; Rangel, Ricardo C.; Sasaki, Katia R.A.; Ortiz-Conde, Adelmo; Martino, João A.
• Is Part Of: Solid-state electronics. Volume 169(2020)
• Publication Date: 2020-07
• Subjects: Back enhanced BE SOI -- MOSFET -- Threshold voltage -- Device architecture -- Parameter extraction -- Lateral optimization -- Triode region; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107815
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A simple model is proposed for the Back Enhanced SOI MOSFET in triode region. This model is based on a conventional MOSFET model in series with resistors and antiparallel Schottky diodes. A robust parameter extraction method, based on lateral optimization, is also presented. The dependence of the extracted parameters with the back-gate bias is studied.