Vertical heterojunction Ge0.92Sn0.08/Ge gate-all-around nanowire pMOSFETs with NiGeSn contact. (June 2020)

• Record Type: Journal Article
• Authors: Liu, Mingshan; Mertens, Konstantin; von den Driesch, Nils; Schlykow, Viktoria; Grap, Thomas; Lentz, Florian; Trellenkamp, Stefan; Hartmann, Jean-Michel; Knoch, Joachim; Buca, Dan; Zhao, Qing-Tai
• Is Part Of: Solid-state electronics. Volume 168(2020)
• Publication Date: 2020-06
• Subjects: GeSn/Ge -- GAA -- Vertical nanowire -- pFETs -- Top-down -- NiGeSn; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107716
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: Vertical heterojunction Ge0.92 Sn0.08 /Ge gate-all-around (GAA) nanowire pMOSFETs fabricated with a top-down approach are reported. With optimized processes, pFETs with nanowire diameters as small as 32 nm were achieved and a decent ION /IOFF ratio of ~3 × 10 6 was obtained thanks to the GAA nanowire geometry, the GeSn/Ge heterostructure and NiGeSn metallization. A compensating effect between top source resistance and diameter-related electrostatics was identified for pFETs without NiGeSn source. Devices with NiGeSn source showed significant improved ION, ION /IOFF ratio and subthreshold swing (SS) characteristics compared with those without NiGeSn.