Cite
HARVARD Citation
Zhang, Y. et al. (2020). Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits. Journal of materials science & technology. pp. 1-12. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Zhang, Y. et al. (2020). Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated α-InGaZnO transistors and inverter circuits. Journal of materials science & technology. pp. 1-12. [Online].