Charge transport mechanism of self-powered GaN p-i-n α-particle detector. (July 2020)

• Record Type: Journal Article
• Authors: Geng, Xinlei; Xia, Xiaochuan; Liu, Jun; Cui, Xingzhu; Sun, Zhonghao; Huang, Huishi; Xue, Dongyang; Liang, Xiaohua; Meng, Xiangcheng; Liang, Hongwei
• Is Part Of: Superlattices and microstructures. Volume 143(2020)
• Publication Date: 2020-07
• Subjects: α-particle detector -- GaN -- p-i-n -- Hole diffusion; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2020.106563
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: In this paper, a model based on charge collection efficiency ( CCE ) has been developed to investigate the charge transport mechanism of self-powered GaN p-i-n α-particle detector. To validate the model, a GaN p-i-n α-particle detector with 20 μm unintentionally doped layer was fabricated and irradiated by 5.48 MeV α particles. The contribution of hole diffusion to CCE was observed to be 17% at zero bias and slightly decreased to 14% at a reverse voltage of 10 V. The consistency between the experimental result and theoretical calculation demonstrates that charge transport mechanism is dominated by hole diffusion of non-depleted region. This work proves the appreciable advantage of GaN p-i-n detectors to detect α particles even without external power supply. Highlights: A self-powered GaN p-i-n α-particle detector has been successfully prepared. The thickness of unintentionally doped GaN layer can reach 20 μm. Charge transport mechanism of the detector has been investigated.