A breakdown model of LDMOS optimizing lateral and vertical electric field to improve breakdown voltage by multi-ring technology. (April 2020)

• Record Type: Journal Article
• Authors: Dong, Ziming; Duan, Baoxing; Li, Mingzhe; Wang, YanDong; Yang, Yintang
• Is Part Of: Solid-state electronics. Volume 166(2020)
• Publication Date: 2020-04
• Subjects: Analytical model -- Breakdown voltage (BV) -- Lateral Double-Diffused Metal-Oxide-Semiconductor (LDMOS) -- Multi-Ring (M-R); Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2020.107775
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The breakdown model of the M-R LDMOS is obtained by solving Poisson's equation. The effect of the M-R on the surface and vertical electric fields is explained. The BV s of the M-R LDMOS are obtained to predict the breakdown behaviors. The analytical results can be validated by Sentaurus TCAD simulation. Abstract: An analytical model for the breakdown voltage ( BV ) of a Lateral Double-diffused Metal Oxide Semiconductor field-effect transistor with a Multi-Ring structure (M-R LDMOS) is presented. The proposed analytical model is obtained by solving Poisson's equation in cylindrical coordinates, which can reasonably explain the modulation effect of the M-R structure on the surface and vertical electric field distributions at the same time, and accurately describe the potential and electric field distributions of the M-R structure. As well as the lateral, vertical and radial BV s are formulized to predict the breakdown behaviors. In the paper, all the analytical results can be validated by numerical results obtained by Sentaurus Technology Computer Aided Design (TCAD) simulation, showing the accuracy of the proposed model. It is worth noting that the proposed analytical model is applicable to lateral power devices with an M-R structure.