Cite
MLA Citation
Uiho Choi et al.. “Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire.” Physica status solidi, vol. 217, no. 7, 2020, p. n/a. http://access.bl.uk/ark:/81055/vdc_100103408334.0x000010