Cite
HARVARD Citation
Sato, N. et al. (2020). Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH3SiCl3/H2. International journal of chemical kinetics. 52 (6), pp. 359-367. [Online].
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Sato, N. et al. (2020). Modeling of the elementary gas‐phase reaction during chemical vapor deposition of silicon carbide from CH3SiCl3/H2. International journal of chemical kinetics. 52 (6), pp. 359-367. [Online].