Cite
HARVARD Citation
Kabouche, R. et al. (2020). Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. Physica status solidi. 217 (7), p. n/a. [Online].
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Kabouche, R. et al. (2020). Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures. Physica status solidi. 217 (7), p. n/a. [Online].