Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN. Issue 4 (9th January 2020)

• Record Type: Journal Article
• Authors: Casamento, Joseph; Xing, Huili Grace; Jena, Debdeep
• Other Names: Shadi Shahedipour-Sandvik F. guestEditor.; Qhalid Fareed guestEditor.
• Is Part Of: Physica status solidi. Volume 257:Issue 4(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-09
• Subjects: nitrides -- oxygen -- piezoelectrics -- scandium -- thin films; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201900612
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc x Ga1− x N/GaN and Sc x Al1− x N/AlN grown by molecular beam epitaxy (MBE). In the Sc x Ga1− x N/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10 19 cm −3, with an increase directly correlated with the scandium content. In the Sc x Al1− x N–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2 O3 template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10 19 and 10 21 cm −3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. Abstract : Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer thin‐film heterostructures: Sc x Ga1− x N/GaN ( x = 0–0.28) and Sc x Al1− x N/AlN ( x = 0–0.26) grown by molecular beam epitaxy (MBE). In the Sc x Ga1− x N–GaN and Sc x Al1− x N–AlN heterostructures, oxygen concentration is found to be below 1 × 10 19 cm −3 and from 1 × 10 19 to 1 × 10 21 cm −3, respectively.