Oxygen Incorporation in the Molecular Beam Epitaxy Growth of ScxGa1−xN and ScxAl1−xN. Issue 4 (9th January 2020) - Casamento, Joseph
Abstract : Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer heterostructures: Sc x Ga1− x N/GaN and Sc x Al1− x N/AlN grown by molecular beam epitaxy (MBE). In the Sc x Ga1− x N/GaN heterostructure grown in metal‐rich conditions on GaN–SiC template substrates with Sc contents up to 28 at%, the oxygen concentration is found to be below 1 × 10 19 cm −3, with an increase directly correlated with the scandium content. In the Sc x Al1− x N–AlN heterostructure grown in nitrogen‐rich conditions on AlN–Al2 O3 template substrates with Sc contents up to 26 at%, the oxygen concentration is found to be between 10 19 and 10 21 cm −3, again directly correlated with the Sc content. The increase in oxygen and carbon takes place during the deposition of scandium‐alloyed layers. Abstract : Secondary‐ion mass spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium‐containing nitride semiconductor multilayer thin‐film heterostructures: Sc x Ga1− x N/GaN ( x = 0–0.28) and Sc x Al1− x N/AlN ( x = 0–0.26) grown by molecular beam epitaxy (MBE). In the Sc x Ga1− x N–GaN and Sc x Al1− x N–AlN heterostructures, oxygen concentration is found to be below 1 × 10 19 cm −3 and from 1 × 10 19 to 1 × 10 21 cm −3, respectively.