Photodetectors: Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband (Adv. Funct. Mater. 12/2020). (17th March 2020)

• Record Type: Journal Article
• Authors: Yang, Ming; Han, Qi; Liu, Xianchao; Han, Jiayue; Zhao, Yafei; He, Liang; Gou, Jun; Wu, Zhiming; Wang, Xinran; Wang, Jun
• Is Part Of: Advanced functional materials. Volume 30:Number 12(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-03-17
• Subjects: Bi2Se3 thin films -- heterojunction structures -- infrared optical communication wavebands -- photodetectors -- ultrafast response times; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202070078
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number 1909659, Liang He, Jun Wang, and co‐workers prepare a high‐performance thin film heterojunction photodetector, which is the combination of a 3D topological insulator (Bi2 Se3 ) and MoO3 . The results demonstrate that heat annealing can significantly improve the properties of the device. This detector has broadband detection capabilities, with an ultrafast response time and application‐level detectivity.