Photodetectors: Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband (Adv. Funct. Mater. 12/2020). (17th March 2020) - Yang, Ming
Abstract : In article number 1909659, Liang He, Jun Wang, and co‐workers prepare a high‐performance thin film heterojunction photodetector, which is the combination of a 3D topological insulator (Bi2 Se3 ) and MoO3 . The results demonstrate that heat annealing can significantly improve the properties of the device. This detector has broadband detection capabilities, with an ultrafast response time and application‐level detectivity.