Cite
HARVARD Citation
Li, Z. et al. (2020). High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique. Physica status solidi. 217 (7), p. n/a. [Online].
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Li, Z. et al. (2020). High‐Breakdown‐Voltage AlGaN Channel High‐Electron‐Mobility Transistors with Reduced Surface Field Technique. Physica status solidi. 217 (7), p. n/a. [Online].