Chemical vapor deposition of monolayer MoS2 on sapphire, Si and GaN substrates. (August 2018)

• Record Type: Journal Article
• Authors: Yan, Pengfei; Wang, Jin; Yang, Guofeng; Lu, Naiyan; Chu, Guangyong; Zhang, Xiumei; Shen, Xiaowen
• Is Part Of: Superlattices and microstructures. Volume 120(2018)
• Page Start: 235
• Page End: 240
• Publication Date: 2018-08
• Subjects: Monolayer MoS2 -- Diverse substrates -- Optical property -- Lattice mismatch; Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2018.05.049
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Monolayer MoS2 grown on sapphire, Si, and GaN substrates by chemical vapor deposition (CVD) method under the same growth conditions have been demonstrated, and the effects of diverse substrates on the morphological and optical properties of monolayer MoS2 are systematically compared. The variations of the PL and Raman spectra of monolayer MoS2 on the three substrates are mainly attributed to the different lattice mismatch and thermal conductivity between MoS2 and the substrates. Moreover, uniform contrast of the PL and Raman intensity mappings suggest that the as-grown monolayer MoS2 on diverse substrates achieve high quality and uniformity. Accordingly, the ability to grow monolayer MoS2 with high quality to surface corrugation on diverse substrates would open a route toward the synthesis of heteroand composite structures. Highlights: CVD growth of ML MoS2 on sapphire, Si and GaN substrates under the same condition is demonstrated. Power dependent PL and Raman properties of ML MoS2 on three substrates are systematically studied. High quality and uniformity of ML MoS2 on diverse substrates are obtained.