Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities. (August 2018)
- Record Type:
- Journal Article
- Title:
- Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities. (August 2018)
- Main Title:
- Tuning the optoeletronic characteristics of strain coupled InAs/GaAs bilayer quantum dot heterostructures through compositional and structural variabilities
- Authors:
- Saha, Jhuma
Panda, Debiprasad
Chakrabarti, Subhananda - Abstract:
- Abstract: Strain coupled quantum dots are the high priority research topic of the present day scientific community. The ability to enhance the photoluminescence properties is very important for enhancing performance of quantum dot based lasers and photodetectors. In this article, we study the impact of various sources of variability viz. different capping layer materials, different aspect ratio of QD, which may enhance or deteriorate the photoluminescence characteristics of these structures. A bilayer InAs/GaAs QD with varying GaAs barrier has been considered for this study. The photoluminescence wavelength emission can be tuned from 1.25 μm to 1.38 μm, by varying the capping material of various thicknesses (compositional variability). We have validated with the experimental data to judge the reliability of our simulation study and the average deviation obtained was within 4%. We have also studied the structural variability in terms of aspect ratio and its influence on the optical properties. Finally, we have combined the optimum structures from both compositional and structural variabilities to explore the possibilities of enhancing the performance of the heterostructures, so that they can be used in different applications. Highlights: Impact of compositional and structural variabilities has been studied. Photoluminescence emission can be tuned from 1.25 μm to 1.38 μm. Both variabilities have been combined to obtain enhanced performance. Combined optimum structure might beAbstract: Strain coupled quantum dots are the high priority research topic of the present day scientific community. The ability to enhance the photoluminescence properties is very important for enhancing performance of quantum dot based lasers and photodetectors. In this article, we study the impact of various sources of variability viz. different capping layer materials, different aspect ratio of QD, which may enhance or deteriorate the photoluminescence characteristics of these structures. A bilayer InAs/GaAs QD with varying GaAs barrier has been considered for this study. The photoluminescence wavelength emission can be tuned from 1.25 μm to 1.38 μm, by varying the capping material of various thicknesses (compositional variability). We have validated with the experimental data to judge the reliability of our simulation study and the average deviation obtained was within 4%. We have also studied the structural variability in terms of aspect ratio and its influence on the optical properties. Finally, we have combined the optimum structures from both compositional and structural variabilities to explore the possibilities of enhancing the performance of the heterostructures, so that they can be used in different applications. Highlights: Impact of compositional and structural variabilities has been studied. Photoluminescence emission can be tuned from 1.25 μm to 1.38 μm. Both variabilities have been combined to obtain enhanced performance. Combined optimum structure might be used in laser and photodetector applications. … (more)
- Is Part Of:
- Superlattices and microstructures. Volume 120(2018)
- Journal:
- Superlattices and microstructures
- Issue:
- Volume 120(2018)
- Issue Display:
- Volume 120, Issue 2018 (2018)
- Year:
- 2018
- Volume:
- 120
- Issue:
- 2018
- Issue Sort Value:
- 2018-0120-2018-0000
- Page Start:
- 335
- Page End:
- 343
- Publication Date:
- 2018-08
- Subjects:
- Variabilities -- Bilayer -- Aspect ratio -- Strain -- Eigenstates -- Photoluminescence
Superlattices as materials -- Periodicals
Microstructure -- Periodicals
Semiconductors -- Periodicals
Superréseaux -- Périodiques
Microstructure (Physique) -- Périodiques
Semiconducteurs -- Périodiques
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/07496036 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.spmi.2018.05.057 ↗
- Languages:
- English
- ISSNs:
- 0749-6036
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8547.076700
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 13033.xml