Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer. (March 2020)

• Record Type: Journal Article
• Authors: Usman, Muhammad; Munsif, Munaza; Anwar, Abdur-Rehman; Jamal, Habibullah; Malik, Shahzeb; Islam, Noor Ul
• Is Part Of: Superlattices and microstructures. Volume 139(2020)
• Publication Date: 2020-03
• Subjects: Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2020.106417
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: Green light-emitting diodes light-emitting diodes with specially designed AlGaN electron blocking layer are numerically investigated. Examination of simulation results shows that applying proposed electron blocking layers, the injection of holes inside the active region can be improved. The improved performance for LEDs with specially designed AlGaN electron blocking layer is illustrated through the simulated results i.e. energy band diagrams, distribution of hole concentration and rate of radiative recombination inside the active region. The LEDs with graded AlGaN EBL have considerably enhanced light output power (LOP) and internal quantum efficiency. Highlights: 1. In this work, we propose a special design of EBL layers to improve the device performance of GaN-based green light-emitting diodes. 2. Detailed comparison of optoelectronic properties of the reference and our proposed GaN-based light-emitting diodes has been presented 3. We believe that our proposed design may substantially improve the device performance, especially in the green emission range.