Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate. (May 2015)

• Record Type: Journal Article
• Authors: Yang, Guofeng; Chang, Jianjun; Zhao, Jianli; Tong, Yuying; Xie, Feng; Wang, Jin; Zhang, Qing; Huang, Hongjuan; Yan, Dawei
• Is Part Of: Materials science in semiconductor processing. Volume 33(2015:May)
• Page Start: 149
• Page End: 153
• Publication Date: 2015-05
• Subjects: InGaN/GaN -- Light-emitting diodes׳ -- Patterned sapphire substrate; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.02.002
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: GaN-based blue light-emitting diodes (LEDs) on various patterned sapphire substrates (PSSs) are investigated in detail. Hemispherical and triangular pyramidal PSSs have been applied to improve the performance of LEDs compared with conventional LEDs grown on planar sapphire substrate. The structural, electrical, and optical properties of these LEDs are investigated. The leakage current is related to the crystalline quality of epitaxial GaN films, and it is improved by using the PSS technique. The light output power and emission efficiency of the LED grown on triangular pyramidal PSS with optimized fill factor show the best performance in all the samples, which indicates that the pattern structure and fill factor of the PSS are related to the capability of light extraction.