Polyol synthesis of α-NiS particles and its physico-chemical properties. (May 2015)

• Record Type: Journal Article
• Authors: Surendran, S.; Vijaya Sankar, K.; John Berchmans, L.; Kalai Selvan, R.
• Is Part Of: Materials science in semiconductor processing. Volume 33(2015:May)
• Page Start: 16
• Page End: 23
• Publication Date: 2015-05
• Subjects: Chalcogenides -- Polyol synthesis -- X-ray diffraction -- Dielectric properties -- Electrical properties; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.01.012
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Using simple and low cost polyol method, α-NiS particles are synthesized at different pH conditions (pH 7–pH 14). Single phase formation and possible functional groups of α-NiS are identified through X-ray diffraction (XRD), and Fourier transforms infrared (FT-IR) spectroscopy, respectively. Further, X-ray photoelectron spectroscopy (XPS) clearly reveals the phase purity of α-NiS particles. Scanning electron microscopic (SEM) images reveals the presence of pseudo-spherical particles within the size range of 200–400 nm. Subsequently, the grain size alters the optical and electrical properties of the samples significantly. Similarly, α-NiS prepared at pH 8 provides high dielectric constant (2.3×10 4 ), and low dielectric loss (13×10 3 ), than the sample prepared at pH 7 of α-NiS.