Cite
HARVARD Citation
Vogt, I. et al. (2018). Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. Microelectronics and reliability. pp. 11-15. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Vogt, I. et al. (2018). Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. Microelectronics and reliability. pp. 11-15. [Online].