A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width. Issue 2 (6th February 2020)

• Record Type: Journal Article
• Authors: Chun, Jaeyi; Li, Siwei; Malakoutian, Mohamadali; Ji, Dong; Chowdhury, Srabanti
• Other Names: Tanaka Masaaki guestEditor.; Sugiyama Masakazu guestEditor.; Fujii Takuro guestEditor.; Ohya Shinobu guestEditor.
• Is Part Of: Physica status solidi. Volume 257:Issue 2(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-02-06
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.202070013
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : The Schottky‐barrier static induction transistor (SIT) does not require any p‐type materials and gate dielectrics for its operation, providing a straightforward way to develop GaN‐based high‐frequency power devices. The first derivative of output curves of a Schottky‐junction vertical channel GaN SIT with sub‐micrometer‐sized fin was studied by Jaeyi Chun et al. at Stanford WBG‐Lab (article number 1900545 ) to understand its fundamental electrical properties. The derivative of output curves increases as a function of drain voltage in ohmic region due to the raised potential minima in the channel, which has not been seen in SITs with relatively long fin width.