A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width. Issue 2 (6th February 2020) - Chun, Jaeyi
Abstract : The Schottky‐barrier static induction transistor (SIT) does not require any p‐type materials and gate dielectrics for its operation, providing a straightforward way to develop GaN‐based high‐frequency power devices. The first derivative of output curves of a Schottky‐junction vertical channel GaN SIT with sub‐micrometer‐sized fin was studied by Jaeyi Chun et al. at Stanford WBG‐Lab (article number 1900545 ) to understand its fundamental electrical properties. The derivative of output curves increases as a function of drain voltage in ohmic region due to the raised potential minima in the channel, which has not been seen in SITs with relatively long fin width.