Transparent p-type NiO:Al thin films as room temperature hydrogen and methane gas sensors. (April 2020)

• Record Type: Journal Article
• Authors: Gagaoudakis, E.; Michail, G.; Katerinopoulou, D.; Moschovis, K.; Iliopoulos, E.; Kiriakidis, G.; Binas, V.; Aperathitis, E.
• Is Part Of: Materials science in semiconductor processing. Volume 109(2020)
• Publication Date: 2020-04
• Subjects: p-type gas sensors -- Transparent gas sensors -- NiO:Al -- Sputtering -- H2 and CH4 sensing at room temperature; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.104922
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Transparent Al-doped NiO thin films with thickness of 100 nm were prepared by radio frequency (rf) sputtering technique in order to investigate their response to reducing gases such as hydrogen (H2 ) and methane (CH4 ), at room temperature (RT). During deposition, the amount of doping [Al/(Al + Ni)] was 10%, while the O2 content in the Ar–O2 mixture in the plasma was 2.8%. These optimum values were set to obtain films with transmittance over 40% in the visible and optical energy band gap (Eg) of 3.65 eV. All films were polycrystalline, with a crystallite size of 7.9 nm and a lattice constant of 0.42 nm. Moreover, the films showed a smooth surface with root mean square (rms) roughness of 2.87 nm. The p-type electric behavior of the films was identified by current modulated ac-Hall effect measurements. The films were exposed to 100 ppm H2 in synthetic air, at room temperature, showing a typical p-type behavior and a sensitivity of 68%, while the response and recovery times were found to be 388 s and 451 s, respectively. Subsequently, the films were also exposed on CH4 showing a sensitivity of 58%, with response and recovery times equal to 1373 s and 95 s, respectively.