Cite
HARVARD Citation
Kim, J. et al. (2019). Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory. Chemical science. 10 (47), pp. 10888-10893. [Online].
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Kim, J. et al. (2019). Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory. Chemical science. 10 (47), pp. 10888-10893. [Online].