V-doped ZnO diluted magnetic semiconductor prepared by chemical spray pyrolysis. (April 2020)

• Record Type: Journal Article
• Authors: Gomaa, M.M.; Sayed, M.H.; Chikoidze, E.; Dumont, Y.; Boshta, M.
• Is Part Of: Materials science in semiconductor processing. Volume 109(2020)
• Publication Date: 2020-04
• Subjects: V-doped ZnO -- Chemical spray pyrolysis -- Morphological transformation -- Magnetoresistance -- Magnetic properties; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2020.104944
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: Chemical spray pyrolysis is utilized to deposit ZnO thin films with varied vanadium (V) contents, offering a simple, low cost and large-scale production deposition process. The effect of introducing V on structural, morphological, optical, electrical and magnetic properties of ZnO thin films is studied. XRD measurements reveal single phase ZnO polycrystalline layers with hexagonal wurtzite structure and high texturing along {002} plane. The incorporation of V into the ZnO lattice is confirmed through the XRD peaks shift towards a higher angle. Further, the SEM micrographs indicate morphological transformation from hexagonal nanoplates to spherical particles when increasing the V content from 2% to 10% nominally. All films are optically transparent in VIS and NIR spectral regions and the optical transmittance is strongly decreasing with increasing the V percentage. The magnetic measurement data shows paramagnetic behavior for the ZnO layer doped with 2% V while ZnO layer doped with 10% V shows a small ferromagnetic behavior. Additionally, the magnetoresistance measurement at 1.6 T shows positive values at room temperature and increased from 6% to 12% when increasing V amount.