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APA Citation
Dongre, B., Carrete, J., Wen, S., Ma, J., Li, W., Mingo, N., & Madsen, G. K. H. (2020). combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si. Journal of materials chemistry, 8(3), 1273–1278. http://access.bl.uk/ark:/81055/vdc_100099361113.0x000012