Effect of doping Mg on the structure and optical properties of LiNbO3 films prepared by radio-frequency magnetron sputtering. (15th March 2020)
- Record Type:
- Journal Article
- Title:
- Effect of doping Mg on the structure and optical properties of LiNbO3 films prepared by radio-frequency magnetron sputtering. (15th March 2020)
- Main Title:
- Effect of doping Mg on the structure and optical properties of LiNbO3 films prepared by radio-frequency magnetron sputtering
- Authors:
- Zhao, Li
Shi, Laixiang
Wang, Ji
Yan, Jun
Chen, Yunlin
Zheng, Yanqing - Abstract:
- Abstract: High-quality magnesia-doped lithium niobate (LN: MgO) films were deposited by radio-frequency magnetron sputtering. The deposited films were characterized for their structural, surface morphology and elemental atomic percentages by X-ray diffraction, Raman spectra, scanning electron microscopy and energy dispersive spectroscopy, respectively. The results show that the LN: MgO films without impurities phase has a preferred orientation of (012) plan. The optical properties of LN: MgO films were studied systematically. It reveals that the average transmittance of LN: MgO film is related to the atomic percentage of Mg element and the maximum of that is 89% when the atomic percentage of Mg element is 0.8%. The optical band gap can be adjusted from 3.85 eV to 4.04 eV by changing deposition conditions to control the grain size of the films. Moreover, the optical damage threshold of LN: MgO films was investigated and the value of that was as high as 4.68 × 10 4 W/cm 2 . These characteristics of LN: MgO films may provide promising applications in the fabrication of novel optoelectronic devices. Highlights: The LN: MgO films had been grown on glass substrates by radio-frequency magnetron sputtering. The structure and optical properties of LN film with Mg doping was studied. The optical damage threshold of the LN: MgO film was as high as 4.68 × 10 4 W/cm 2 .
- Is Part Of:
- Materials science in semiconductor processing. Volume 108(2020)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 108(2020)
- Issue Display:
- Volume 108, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 108
- Issue:
- 2020
- Issue Sort Value:
- 2020-0108-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-03-15
- Subjects:
- Magnesia-doped -- Lithium niobate films -- Radio-frequency magnetron sputtering -- Optical properties
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2019.104901 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5396.440600
British Library DSC - BLDSS-3PM
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