Stimulation of n−π∗transition of g-C3N4 through ZnAl-layered double hydroxide for solar light assisted phenol degradation. (15th March 2020)
- Record Type:
- Journal Article
- Title:
- Stimulation of n−π∗transition of g-C3N4 through ZnAl-layered double hydroxide for solar light assisted phenol degradation. (15th March 2020)
- Main Title:
- Stimulation of n−π∗transition of g-C3N4 through ZnAl-layered double hydroxide for solar light assisted phenol degradation
- Authors:
- Tripathi, Alok
Narayanan, Sheeba - Abstract:
- Abstract: The structural framework of graphitic carbon nitride (g-C3 N4 ) was tuned with Zinc Aluminium layer double hydroxide (ZnAl-LDH), and its photocatalytic activity was investigated through solar light assisted phenol degradation of real effluent. The modified g-C3 N4 (70%g-C3 N4 /ZnAl-LDH) possess more efficient inhibition of electron and hole pairs resulting in red shifting of absorption edge which stimulates the n − π ∗ electronic transition. Morphological studies confirm that the LDH flocks consistently covered the g-C3 N4 sheets affirming a substantial collaboration between two-layered material through electrostatic interlink and charge exchange synergy. Furthermore, 70%g-C3 N4 /ZnAl-LDH have an increased surface area of 26.292 m 2 /g and a reduced bandgap energy of 2.55 eV, which results in enhanced photocatalytic activity. The results of experimental study indicate that after 300 min of illumination in slight acidic condition, with 1.5 g/L chemical oxidant dose at 3 L/h reactor flowrate, 70%g-C3 N4 /ZnAl-LDH exhibits 79.35% degradation of phenol, and under same conditions, g-C3 N4 confers 61.25% degradation. Graphical abstract: Image 1 Highlights: Structural framework of g-C3 N4 is tuned with Zinc Aluminium layer double hydroxide (ZnAl-LDH) to stimulate its n − π ∗ electronic transition. The performance of ZnAl-LDH modified g-C3 N4 has been investigated to treat real industrial effluent under natural solar light.
- Is Part Of:
- Materials science in semiconductor processing. Volume 108(2020)
- Journal:
- Materials science in semiconductor processing
- Issue:
- Volume 108(2020)
- Issue Display:
- Volume 108, Issue 2020 (2020)
- Year:
- 2020
- Volume:
- 108
- Issue:
- 2020
- Issue Sort Value:
- 2020-0108-2020-0000
- Page Start:
- Page End:
- Publication Date:
- 2020-03-15
- Subjects:
- Graphitic carbon nitride -- Zinc aluminium layer double hydroxide -- Solar light -- Real effluent -- And bandgap energy
Semiconductors -- Periodicals
Integrated circuits -- Materials -- Periodicals
Semiconducteurs -- Périodiques
Circuits intégrés -- Matériaux -- Périodiques
Electronic journals
621.38152 - Journal URLs:
- http://www.sciencedirect.com/science/journal/latest/13698001 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.mssp.2019.104892 ↗
- Languages:
- English
- ISSNs:
- 1369-8001
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
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