Characteristic function approach to analytical parameter extraction, verification, and circuit calibration for small-signal equivalent circuit of field effect transistors. (March 2020)

• Record Type: Journal Article
• Authors: Huang, F.Y.; Wei, Z.N.; Zhang, Y.M.; Tang, X.S.; Jiang, N.
• Is Part Of: Solid-state electronics. Volume 165(2020)
• Publication Date: 2020-03
• Subjects: Field effect transistor -- Equivalent circuit -- RF modeling -- Parameter extraction -- Characteristic function; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107753
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: A novel methodology for parameter extraction, verification and circuit calibration for transistor RF modeling using characteristic-function-based analytical iterations. A π-topology of the original sub-circuit for the equivalent circuit is used to replace the traditional extra supplemental sub-circuit. The present method can verify and screen non-physical multiple solutions. Abstract: An analytical approach to parameter extraction and circuit calibration based on characteristic functions is proposed for small-signal equivalent circuit of field effect transistors (FETs). By using a π-topology of the original intrinsic sub-circuit to replace the conventional T -topology of a supplemental sub-circuit in the equivalent circuit, with the characteristic functions being fitted for both the intrinsic and extrinsic sub-circuits, high precision model parameters of the transistor can be extracted analytically without numerical curve fitting. The present method can serve as an effective way to verify and screen non-physical multiple solutions pertaining to conventional approaches. By comparing measured and simulated characteristic functions, series channel resistance along with channel inductance has been found critical for high frequency modeling. The validity of the present approach is demonstrated for 0.1 μm GaN HEMTs up to 65 GHz.