Cite

MLA Citation

    Yashwanth Balaji et al.. “MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts.” Advanced functional materials, vol. 30, 2020, p. n/a. http://access.bl.uk/ark:/81055/vdc_100099374606.0x00000d
  
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