Cite
HARVARD Citation
Balaji, Y. et al. (2020). MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts. Advanced functional materials. p. n/a. [Online].
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Balaji, Y. et al. (2020). MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts. Advanced functional materials. p. n/a. [Online].