Adsorption of Bi adatom on InAs (001) – β2 (2 × 4) and α2 (2 × 4) surface: A first principles study. (1st March 2020)

• Record Type: Journal Article
• Authors: Kourchid, Kouloud; Alaya, Ramzi; Rebey, Ahmed; Mbarki, Mourad
• Is Part Of: Materials science in semiconductor processing. Volume 107(2020)
• Publication Date: 2020-03-01
• Subjects: InAs (001) surface -- Adsorption energy -- Bismuth -- Growth conditions; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104856
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this work, we have interested on the initial growth processes of bismuth on the InAs (001) - β2 (2 × 4) and α2 (2 × 4) reconstructed surfaces. First, we have calculated the adsorption energy of single Bi atom at different sites located on InAs (001) the surface. Next, we have studied the structural and the electronic properties of the Bi/InAs(001) system. Finally, we have calculated the chemical potential in the gas phase (μBi ) for Bi adatom as a function of gas temperature for different beam equivalent pressures (BEP). We have determined the pressure temperature diagrams (p-T) for different considered sites. Our results show that the adsorption-desorption behavior of Bi adatom depends on the growth conditions. We have demonstrated that the Bi atom is adsorbed on both β2 (2 × 4) and α2 (2 × 4) at low temperature and at low BEP of Bi. Our obtained results seem to be in agreement with those obtained by molecular beam epitaxy (MBE).