1‐nm Si Patterning: Patterning Si at the 1 nm Length Scale with Aberration‐Corrected Electron‐Beam Lithography: Tuning of Plasmonic Properties by Design (Adv. Funct. Mater. 52/2019). (23rd December 2019)

• Record Type: Journal Article
• Authors: Manfrinato, Vitor R.; Camino, Fernando E.; Stein, Aaron; Zhang, Lihua; Lu, Ming; Stach, Eric A.; Black, Charles T.
• Is Part Of: Advanced functional materials. Volume 29:Number 52(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-12-23
• Subjects: aberration correction -- atomic scale -- EELS -- electron‐beam lithography -- line edge roughness -- nanofabrication -- plasmonics -- silicon patterning -- volume plasmon; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201970353
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number 1903429, Vitor R. Manfrinato, Fernando E. Camino, and co‐workers achieve 1‐nm resolution Si patterning using aberration‐corrected electron‐beam lithography (AC‐EBL) and reactive ion etching, techniques compatible with Si technology processes, resulting in features with a line edge roughness of 1 nm. AC‐EBL is also used to tune the Si volume plasmon energy as a function of nanostructure geometry, demonstrating control of electro‐optical properties of nanostructures by design.