Using yield to predict long-term reliability of integrated circuits: Application of Boltzmann-Arrhenius-Zhurkov model. (February 2020)

• Record Type: Journal Article
• Authors: Suhir, E.; Stamenkovic, Z.
• Is Part Of: Solid-state electronics. Volume 164(2020)
• Publication Date: 2020-02
• Subjects: Yield -- Reliability -- Integrated circuit technology; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107746
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: The Boltzmann-Arrhenius-Zhurkov (BAZ) model has been successfully modified to predict the integrated circuit reliability. The modification introduces the impact of integrated circuit yield on the stress-free failure activation energy. The modified model has been verified on an application example from the semiconductor technology practice. Abstract: Modified Boltzmann-Arrhenius-Zhurkov (BAZ) constitutive model is applied to predict the reliability of integrated circuits. The model accounts for the impact of physical defects and process variations on the stress-free activation energy, which is viewed as a critical material's property. It is shown that the probability of non-failure (reliability) and the corresponding mean-time-to-failure (MTTF) can be evaluated from the failure-oriented-accelerated-testing (FOAT) geared to the modified BAZ model. The general concept is illustrated by the experimental data.