Effect of different growth temperature on the formation of ternary metal chalcogenides AgBiS2. (1st March 2020)

• Record Type: Journal Article
• Authors: Sugarthi, S.; Bakiyaraj, G.; Abinaya, R.; Navaneethan, M.; Archana, J.; Shimomura, M.
• Is Part Of: Materials science in semiconductor processing. Volume 107(2020)
• Publication Date: 2020-03-01
• Subjects: Silver bismuth sulfide -- Compound semiconductors -- Structural properties -- Optical properties -- Surface morphology -- XPS analysis; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2019.104781
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: AgBiS2 has been synthesized using solvothermal method at various growth temperatures of 140 °C, 160 °C, and 180 °C (ABS 1, ABS 2, ABS 3) with EG. In order to enhance the quality of AgBiS2, it has been synthesized and annealed at different temperatures. XRD pattern confirms the formation of cubic phase of AgBiS2 with binary phase of silver sulfide and bismuth sulfide. FESEM micrograph illustrated the grown samples with different morphologies. From UV-DRS spectroscopy, the measured value of optical band gap is 2.92 eV, 2.65 eV and 2.69 eV of ABS 1, ABS 2 and ABS 3 samples respectively. TEM analysis and FTIR spectrum supported the confirmation of AgBiS2 synthesis. XPS analysis confirmed the presence of Ag, Bi and S elements.